PANJIT SemiConductor Single Bipolar Transistors BC848A_R1_00001

NPN silicon transistor for general purpose amplifier applications in SOT-323 surface mount package, rated for 100 mA continuous collector current, 30 V collector-emitter voltage, and 250 mW power dissipation. Junction and storage temperature range is -55°C to 150°C. Compliant with RoHS 2.0 and IEC 61249. DC current gain (hFE) for AW suffix variants is 90 to 220 at IC=10 μA and 110 to 220 at IC=2 mA. Base-emitter voltage at IC=10 mA and VCE=5 V is up to 0.77 V. Collector-emitter saturation voltage at IC=10 mA and IB=0.5 mA is up to 0.6 V. Collector-base capacitance is up to 4.5 pF at 10 V reverse bias. Terminals are solderable per MIL-STD-750, Method 2026.