PANJIT SemiConductor Single Bipolar Transistors BC847BFN3_R1_00501

NPN general purpose transistor in DFN1006-3L package, rated for a collector-emitter voltage of 45 V, continuous collector current of 100 mA, and power dissipation of 250 mW. Junction temperature ranges from -55 °C to +150 °C. Meets RoHS 2.0 and IEC 61249 green standards. Thermal resistance from junction to ambient is 500 °C/W.