Panasonic TRANSISTORS - Transistors (BJT) - Arrays - XP0550100L XP0550100L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114260-XP0550100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMINI6-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 160 @ 2mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote
Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114260-XP0550100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMINI6-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 160 @ 2mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - XP0550100L - 114260-XP0550100L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - XP0550100L
114260-XP0550100L
TRANSISTORS - Transistors (BJT) - Arrays - XP0550100L 114260-XP0550100L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114260-XP0550100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN (Dual) Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SMINI6-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 10mA, 100mA Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 160 @ 2mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 114260-XP0550100L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: 2 NPN (Dual)
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMINI6-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 160 @ 2mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 114260-XP0550100L
Product Name TRANSISTORS - Transistors (BJT) - Arrays - XP0550100L
Polarity NPN; 2 NPN (Dual)
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 66008258 - Radwell International
Fuji Electric Corp. of America
View Details
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 98-0193 - 858716-98-0193 - Win Source Electronics
Specs
Transistor Type MOSFET
Package Type SOT3
View Details
Bipolar Transistors - 1219998 - RS Components, Ltd.
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT23; Sot-23
View Details
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die - QPD2025D - Qorvo
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers