Panasonic Bipolar Transistor Arrays, Pre-Biased XP0331200L

Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 150mW Surface Mount SMini5-G1
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 150mW Surface Mount SMini5-G1
Request a Quote Datasheet

Suppliers

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Product
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Supplier Links
Bipolar Transistor Arrays, Pre-Biased - XP0331200LTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
XP0331200LTR-ND
Bipolar Transistor Arrays, Pre-Biased XP0331200LTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 150mW Surface Mount SMini5-G1

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150MHz, 80MHz 150mW Surface Mount SMini5-G1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XP0331200L - 036640-XP0331200L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XP0331200L
036640-XP0331200L
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XP0331200L 036640-XP0331200L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036640-XP0331200L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz, 80MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini5-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036640-XP0331200L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz, 80MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMini5-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - XP0331200L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
XP0331200L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) XP0331200L
TRANS PREBIAS NPN/PNP SMINI5

TRANS PREBIAS NPN/PNP SMINI5

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number XP0331200LTR-ND 036640-XP0331200L XP0331200L
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XP0331200L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual)
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