Panasonic TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XN0F25600L XN0F25600L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036636-XN0F25600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: MINI6-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Typical Gain (hFE) (Min): 100 @ 50mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036636-XN0F25600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: MINI6-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Typical Gain (hFE) (Min): 100 @ 50mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XN0F25600L - 036636-XN0F25600L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XN0F25600L
036636-XN0F25600L
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XN0F25600L 036636-XN0F25600L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036636-XN0F25600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: MINI6-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Typical Gain (hFE) (Min): 100 @ 50mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036636-XN0F25600L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: MINI6-G1
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 80mV @ 2.5mA, 50mA
Typical Gain (hFE) (Min): 100 @ 50mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
Dual Bipolar Transistor
293-XN0F25600L
Dual Bipolar Transistor 293-XN0F25600L
TRANS PREBIAS DUAL NPN MINI6 Product overview: XN0F25600L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-XN0F25600L can be used for catalog matching and distributor lookup.

TRANS PREBIAS DUAL NPN MINI6 Product overview: XN0F25600L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-XN0F25600L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - XN0F25600L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
XN0F25600L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) XN0F25600L
TRANS PREBIAS DUAL NPN MINI6

TRANS PREBIAS DUAL NPN MINI6

Supplier's Site
TRANS PREBIAS DUAL NPN MINI6 - 590-XN0F25600L - Utmel Electronic Limited
Hong Kong, China
TRANS PREBIAS DUAL NPN MINI6
590-XN0F25600L
TRANS PREBIAS DUAL NPN MINI6 590-XN0F25600L
TRANS PREBIAS DUAL NPN MINI6

TRANS PREBIAS DUAL NPN MINI6

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 036636-XN0F25600L 293-XN0F25600L XN0F25600L 590-XN0F25600L
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - XN0F25600L Dual Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS PREBIAS DUAL NPN MINI6
Polarity NPN; 2 NPN - Pre-Biased (Dual) NPN
Package Type SOT3; MINI6-G1
IC(max) 600 milliamps 600 milliamps
Unlock Full Specs
to access all available technical data