Win Source Part Number: 1215766-XN0431200L
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 300mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 150MHz, 80MHz
Package / Case: SOT-23-6
Supplier Device Package: MINI6-G1
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
HTSUS: 8541.21.0075
Mfr: Panasonic Electronic Components
Other Names: XN0431200LDKR,XN0431
Base Product Number: XN0431
Product Status: Obsolete
TRANS NPN/PNP PREBIAS 0.3W MINI6 Product overview: XN0431200L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-XN0431200L can be used for catalog matching and distributor lookup.
TRANS NPN/PNP PREBIAS 0.3W MINI6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1215766-XN0431200L | 293-XN0431200L | XN0431200L |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | 0.3W Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; PNP | ||
| Package Type | SOT3 | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps |
| Power Gain | 60 dB | ||
| Operating Frequency | 150 to 80 MHz |