Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased XN0431200L

Description
Win Source Part Number: 1215766-XN0431200L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 300mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 150MHz, 80MHz Package / Case: SOT-23-6 Supplier Device Package: MINI6-G1 ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: XN0431200LDKR,XN0431 200LTR-NDR,XN4312-(T X),Q4360600,XN043120 0LCT,XN0431200LTR,XN 4312TR-ND,XN0431200L CT-NDR,XN4312CT-ND,X N4312CT,XN4312TR,XN4 312-TX Base Product Number: XN0431 Product Status: Obsolete
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Description
Win Source Part Number: 1215766-XN0431200L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 300mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 150MHz, 80MHz Package / Case: SOT-23-6 Supplier Device Package: MINI6-G1 ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: XN0431200LDKR,XN0431 200LTR-NDR,XN4312-(T X),Q4360600,XN043120 0LCT,XN0431200LTR,XN 4312TR-ND,XN0431200L CT-NDR,XN4312CT-ND,X N4312CT,XN4312TR,XN4 312-TX Base Product Number: XN0431 Product Status: Obsolete
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1215766-XN0431200L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1215766-XN0431200L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1215766-XN0431200L
Win Source Part Number: 1215766-XN0431200L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 300mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Frequency - Transition: 150MHz, 80MHz Package / Case: SOT-23-6 Supplier Device Package: MINI6-G1 ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: XN0431200LDKR,XN0431 200LTR-NDR,XN4312-(T X),Q4360600,XN043120 0LCT,XN0431200LTR,XN 4312TR-ND,XN0431200L CT-NDR,XN4312CT-ND,X N4312CT,XN4312TR,XN4 312-TX Base Product Number: XN0431 Product Status: Obsolete

Win Source Part Number: 1215766-XN0431200L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 300mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 150MHz, 80MHz
Package / Case: SOT-23-6
Supplier Device Package: MINI6-G1
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
HTSUS: 8541.21.0075
Mfr: Panasonic Electronic Components
Other Names: XN0431200LDKR,XN0431200LTR-NDR,XN4312-(TX),Q4360600,XN0431200LCT,XN0431200LTR,XN4312TR-ND,XN0431200LCT-NDR,XN4312CT-ND,XN4312CT,XN4312TR,XN4312-TX
Base Product Number: XN0431
Product Status: Obsolete

Buy Now Datasheet
Singapore
0.3W Bipolar Transistor
293-XN0431200L
0.3W Bipolar Transistor 293-XN0431200L
TRANS NPN/PNP PREBIAS 0.3W MINI6 Product overview: XN0431200L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-XN0431200L can be used for catalog matching and distributor lookup.

TRANS NPN/PNP PREBIAS 0.3W MINI6 Product overview: XN0431200L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.3W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.3W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-XN0431200L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - XN0431200L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
XN0431200L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) XN0431200L
TRANS NPN/PNP PREBIAS 0.3W MINI6

TRANS NPN/PNP PREBIAS 0.3W MINI6

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1215766-XN0431200L 293-XN0431200L XN0431200L
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 0.3W Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP
Package Type SOT3
IC(max) 100 milliamps 100 milliamps 100 milliamps
Power Gain 60 dB
Operating Frequency 150 to 80 MHz
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