Panasonic TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UP0411MG0L UP0411MG0L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116492-UP0411MG0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSMini5-F3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116492-UP0411MG0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSMini5-F3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UP0411MG0L - 1116492-UP0411MG0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UP0411MG0L
1116492-UP0411MG0L
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UP0411MG0L 1116492-UP0411MG0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116492-UP0411MG0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSMini5-F3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1116492-UP0411MG0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SSMini5-F3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UP0411MG0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UP0411MG0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UP0411MG0L
TRANS PREBIAS DUAL PNP SSMINI5

TRANS PREBIAS DUAL PNP SSMINI5

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1116492-UP0411MG0L UP0411MG0L
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - UP0411MG0L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; 2 PNP - Pre-Biased (Dual)
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