Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased UNR91A6G0L

Description
Win Source Part Number: 1102380-UNR91A6G0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 125 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 80 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Frequency - Transition: 80 MHz Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3 ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: UNR91A6G0LTR,UNR91A6 G0LDKR,UNR91A6G0LCT Product Status: Obsolete
Request a Quote Datasheet
Description
Win Source Part Number: 1102380-UNR91A6G0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 125 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 80 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Frequency - Transition: 80 MHz Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3 ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: UNR91A6G0LTR,UNR91A6 G0LDKR,UNR91A6G0LCT Product Status: Obsolete
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1102380-UNR91A6G0L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1102380-UNR91A6G0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1102380-UNR91A6G0L
Win Source Part Number: 1102380-UNR91A6G0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 125 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 80 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Frequency - Transition: 80 MHz Package / Case: SC-89, SOT-490 Supplier Device Package: SSMini3-F3 ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: UNR91A6G0LTR,UNR91A6 G0LDKR,UNR91A6G0LCT Product Status: Obsolete

Win Source Part Number: 1102380-UNR91A6G0L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 125 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 80 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Frequency - Transition: 80 MHz
Package / Case: SC-89, SOT-490
Supplier Device Package: SSMini3-F3
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
HTSUS: 8541.21.0095
Mfr: Panasonic Electronic Components
Other Names: UNR91A6G0LTR,UNR91A6G0LDKR,UNR91A6G0LCT
Product Status: Obsolete

Buy Now Datasheet
Singapore, Singapore
125MW Bipolar Transistor
292-UNR91A6G0L
125MW Bipolar Transistor 292-UNR91A6G0L
TRANS PREBIAS PNP 125MW SSMINI3 Product overview: UNR91A6G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125MW. Search-friendly keywords include transistor, BJT, switching, amplification, 125MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR91A6G0L can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 125MW SSMINI3 Product overview: UNR91A6G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125MW. Search-friendly keywords include transistor, BJT, switching, amplification, 125MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR91A6G0L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR91A6G0L - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR91A6G0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR91A6G0L
TRANS PREBIAS PNP 50V SSMINI3

TRANS PREBIAS PNP 50V SSMINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1102380-UNR91A6G0L 292-UNR91A6G0L UNR91A6G0L
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 125MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP
Package Type SOT3
IC(max) 80 milliamps 80 milliamps 80 milliamps
Power Gain 160 dB
Operating Frequency 80 MHz
Unlock Full Specs
to access all available technical data