Panasonic 125MW Bipolar Transistor UNR911EG0L

Description
TRANS PREBIAS PNP 125MW SSMINI3 Product overview: UNR911EG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125MW. Search-friendly keywords include transistor, BJT, switching, amplification, 125MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UNR911EG0L can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 125MW SSMINI3 Product overview: UNR911EG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125MW. Search-friendly keywords include transistor, BJT, switching, amplification, 125MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UNR911EG0L can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
125MW Bipolar Transistor
293-UNR911EG0L
125MW Bipolar Transistor 293-UNR911EG0L
TRANS PREBIAS PNP 125MW SSMINI3 Product overview: UNR911EG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125MW. Search-friendly keywords include transistor, BJT, switching, amplification, 125MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UNR911EG0L can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 125MW SSMINI3 Product overview: UNR911EG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125MW. Search-friendly keywords include transistor, BJT, switching, amplification, 125MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UNR911EG0L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR911EG0L - 1116473-UNR911EG0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR911EG0L
1116473-UNR911EG0L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR911EG0L 1116473-UNR911EG0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116473-UNR911EG0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSMini3-F3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1116473-UNR911EG0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SSMini3-F3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-UNR911EG0L 1116473-UNR911EG0L
Product Name 125MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR911EG0L
IC(max) 100 milliamps
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