Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR522600L UNR522600L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036081-UNR522600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 50mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036081-UNR522600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 50mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR522600L - 036081-UNR522600L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR522600L
036081-UNR522600L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR522600L 036081-UNR522600L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036081-UNR522600L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-G1 Maximum Current Collector: 600mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Max Vce (sat): 80mV @ 2.5mA, 50mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 50mA, 5V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036081-UNR522600L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMini3-G1
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 80mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 50mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
150MW Bipolar Transistor
292-UNR522600L
150MW Bipolar Transistor 292-UNR522600L
TRANS PREBIAS NPN 150MW SMINI3 Product overview: UNR522600L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR522600L can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 150MW SMINI3 Product overview: UNR522600L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR522600L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR522600L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR522600L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR522600L
TRANS PREBIAS NPN 20V SMINI3

TRANS PREBIAS NPN 20V SMINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 036081-UNR522600L 292-UNR522600L UNR522600L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR522600L 150MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased
Package Type SOT3; SMini3-G1
IC(max) 600 milliamps 600 milliamps
Unlock Full Specs
to access all available technical data