Panasonic 150MW Bipolar Transistor UNR521LG0L

Description
TRANS PREBIAS NPN 150MW SMINI3 Product overview: UNR521LG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR521LG0L can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS NPN 150MW SMINI3 Product overview: UNR521LG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR521LG0L can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
150MW Bipolar Transistor
292-UNR521LG0L
150MW Bipolar Transistor 292-UNR521LG0L
TRANS PREBIAS NPN 150MW SMINI3 Product overview: UNR521LG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR521LG0L can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 150MW SMINI3 Product overview: UNR521LG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR521LG0L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1144025-UNR521LG0L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1144025-UNR521LG0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1144025-UNR521LG0L
Win Source Part Number: 1144025-UNR521LG0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Frequency - Transition: 150 MHz Package / Case: SC-85 Supplier Device Package: SMini3-F2 ECCN: EAR99 Fake Threat In the Open Market: 76 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: UNR521LG0LDKR,UNR521 LG0LCT,UNR521LG0LTR Product Status: Obsolete

Win Source Part Number: 1144025-UNR521LG0L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Frequency - Transition: 150 MHz
Package / Case: SC-85
Supplier Device Package: SMini3-F2
ECCN: EAR99
Fake Threat In the Open Market: 76 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
HTSUS: 8541.21.0075
Mfr: Panasonic Electronic Components
Other Names: UNR521LG0LDKR,UNR521LG0LCT,UNR521LG0LTR
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR521LG0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR521LG0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR521LG0L
TRANS PREBIAS NPN 50V SMINI3

TRANS PREBIAS NPN 50V SMINI3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 292-UNR521LG0L 1144025-UNR521LG0L UNR521LG0L
Product Name 150MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 150 milliwatts
Polarity NPN
Package Type SOT3
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