Win Source Part Number: 1383793-UNR5212G0L
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Frequency - Transition: 150 MHz
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F2
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
HTSUS: 8541.21.0075
Mfr: Panasonic
Base Product Number: UNR5212
Product Status: Obsolete
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 3,000 pcs
TRANS PREBIAS NPN 50V SMINI3
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1383793-UNR5212G0L | UNR5212G0L |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | |
| Package Type | SOT3 | |
| IC(max) | 100 milliamps | 100 milliamps |
| Power Gain | 60 dB |
