Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A4G0L UNR51A4G0L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 115953-UNR51A4G0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-F2 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 115953-UNR51A4G0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-F2 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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Suppliers

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Product
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A4G0L - 115953-UNR51A4G0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A4G0L
115953-UNR51A4G0L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A4G0L 115953-UNR51A4G0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 115953-UNR51A4G0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-F2 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 115953-UNR51A4G0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMini3-F2
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor 292-UNR51A4G0L
Trans PNP W/res 80HFE S-mini 3P Product overview: UNR51A4G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR51A4G0L can be used for catalog matching and distributor lookup.

Trans PNP W/res 80HFE S-mini 3P Product overview: UNR51A4G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR51A4G0L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR51A4G0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR51A4G0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR51A4G0L
TRANS PREBIAS PNP 50V SMINI3

TRANS PREBIAS PNP 50V SMINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 115953-UNR51A4G0L 292-UNR51A4G0L UNR51A4G0L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR51A4G0L Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP - Pre-Biased
Package Type SOT3; SMini3-F2
IC(max) 80 milliamps 80 milliamps
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