Panasonic Single, Pre-Biased Bipolar Transistors UNR511V00L

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - UNR511V00LTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
UNR511V00LTR-ND
Single, Pre-Biased Bipolar Transistors UNR511V00LTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L - 036078-UNR511V00L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L
036078-UNR511V00L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L 036078-UNR511V00L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036078-UNR511V00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1.5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 6 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036078-UNR511V00L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMini3-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1.5mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 6 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR511V00L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR511V00L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR511V00L
TRANS PREBIAS PNP 50V SMINI3

TRANS PREBIAS PNP 50V SMINI3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number UNR511V00LTR-ND 036078-UNR511V00L UNR511V00L
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Pre-Biased
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