Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L UNR511V00L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036078-UNR511V00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1.5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 6 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L - 036078-UNR511V00L - Win Source Electronics
    Win Source Electronics
  • Single, Pre-Biased Bipolar Transistors - UNR511V00LTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR511V00L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036078-UNR511V00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1.5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 6 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L - 036078-UNR511V00L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L
036078-UNR511V00L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L 036078-UNR511V00L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036078-UNR511V00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SMini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1.5mA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 6 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036078-UNR511V00L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SMini3-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1.5mA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 6 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - UNR511V00LTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
UNR511V00LTR-ND
Single, Pre-Biased Bipolar Transistors UNR511V00LTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 80MHz 150mW Surface Mount SMini3-G1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR511V00L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR511V00L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR511V00L
TRANS PREBIAS PNP 50V SMINI3

TRANS PREBIAS PNP 50V SMINI3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number 036078-UNR511V00L UNR511V00LTR-ND UNR511V00L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511V00L Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP - Pre-Biased PNP
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