Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased UNR511FG0L

Description
Win Source Part Number: 989793-UNR511FG0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Frequency - Transition: 80 MHz Package / Case: SC-85 Supplier Device Package: SMini3-F2 ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: UNR511FG0LCT,UNR511F G0LDKR,UNR511FG0LTR Base Product Number: UNR511 Product Status: Obsolete
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Description
Win Source Part Number: 989793-UNR511FG0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Frequency - Transition: 80 MHz Package / Case: SC-85 Supplier Device Package: SMini3-F2 ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: UNR511FG0LCT,UNR511F G0LDKR,UNR511FG0LTR Base Product Number: UNR511 Product Status: Obsolete
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 989793-UNR511FG0L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
989793-UNR511FG0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 989793-UNR511FG0L
Win Source Part Number: 989793-UNR511FG0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Frequency - Transition: 80 MHz Package / Case: SC-85 Supplier Device Package: SMini3-F2 ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: UNR511FG0LCT,UNR511F G0LDKR,UNR511FG0LTR Base Product Number: UNR511 Product Status: Obsolete

Win Source Part Number: 989793-UNR511FG0L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Frequency - Transition: 80 MHz
Package / Case: SC-85
Supplier Device Package: SMini3-F2
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
HTSUS: 8541.21.0095
Mfr: Panasonic Electronic Components
Other Names: UNR511FG0LCT,UNR511FG0LDKR,UNR511FG0LTR
Base Product Number: UNR511
Product Status: Obsolete

Buy Now Datasheet
Singapore
150MW Bipolar Transistor
283-UNR511FG0L
150MW Bipolar Transistor 283-UNR511FG0L
TRANS PREBIAS PNP 150MW SMINI3 Product overview: UNR511FG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-UNR511FG0L can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 150MW SMINI3 Product overview: UNR511FG0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-UNR511FG0L can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 989793-UNR511FG0L 283-UNR511FG0L
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 150MW Bipolar Transistor
Polarity PNP
Package Type SOT3
IC(max) 100 milliamps 5.00E-4 milliamps
Power Gain 30 dB
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