Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased UNR511600L

Description
Win Source Part Number: 1102372-UNR511600L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Frequency - Transition: 150 MHz Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1 Alternative Parts (Cross-Reference): KSA812YMTF; PDTA144EQAZ; PDTA124EQAZ; PDTA143ZE,115; KSA812LMTF; KSA812GMTF; ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: UNR511600LCT,UNR5116 00LDKR-NDR,UN5116-(T X),UN5116CT,UNR51160 0LTR-NDR,UNR511600LD KR,UN5116,UNR511600L TR,UN5116TR-ND,UN511 6CT-ND,UNR511600LCT- NDR,UN5116TR,UN5116- TX Base Product Number: UNR511 Product Status: Obsolete RoHS Status: RoHS non-compliant
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Description
Win Source Part Number: 1102372-UNR511600L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Frequency - Transition: 150 MHz Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1 Alternative Parts (Cross-Reference): KSA812YMTF; PDTA144EQAZ; PDTA124EQAZ; PDTA143ZE,115; KSA812LMTF; KSA812GMTF; ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: UNR511600LCT,UNR5116 00LDKR-NDR,UN5116-(T X),UN5116CT,UNR51160 0LTR-NDR,UNR511600LD KR,UN5116,UNR511600L TR,UN5116TR-ND,UN511 6CT-ND,UNR511600LCT- NDR,UN5116TR,UN5116- TX Base Product Number: UNR511 Product Status: Obsolete RoHS Status: RoHS non-compliant
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1102372-UNR511600L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1102372-UNR511600L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1102372-UNR511600L
Win Source Part Number: 1102372-UNR511600L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Frequency - Transition: 150 MHz Package / Case: SC-70, SOT-323 Supplier Device Package: SMini3-G1 Alternative Parts (Cross-Reference): KSA812YMTF; PDTA144EQAZ; PDTA124EQAZ; PDTA143ZE,115; KSA812LMTF; KSA812GMTF; ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 4.7 kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: UNR511600LCT,UNR5116 00LDKR-NDR,UN5116-(T X),UN5116CT,UNR51160 0LTR-NDR,UNR511600LD KR,UN5116,UNR511600L TR,UN5116TR-ND,UN511 6CT-ND,UNR511600LCT- NDR,UN5116TR,UN5116- TX Base Product Number: UNR511 Product Status: Obsolete RoHS Status: RoHS non-compliant

Win Source Part Number: 1102372-UNR511600L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Frequency - Transition: 150 MHz
Package / Case: SC-70, SOT-323
Supplier Device Package: SMini3-G1
Alternative Parts (Cross-Reference): KSA812YMTF; PDTA144EQAZ; PDTA124EQAZ; PDTA143ZE,115; KSA812LMTF; KSA812GMTF;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7 kOhms
HTSUS: 8541.21.0075
Mfr: Panasonic Electronic Components
Other Names: UNR511600LCT,UNR511600LDKR-NDR,UN5116-(TX),UN5116CT,UNR511600LTR-NDR,UNR511600LDKR,UN5116,UNR511600LTR,UN5116TR-ND,UN5116CT-ND,UNR511600LCT-NDR,UN5116TR,UN5116-TX
Base Product Number: UNR511
Product Status: Obsolete
RoHS Status: RoHS non-compliant

Buy Now Datasheet
Bipolar Transistor 292-UNR511600L
Trans PNP W/res 160HFE S-mini 3P Product overview: UNR511600L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR511600L can be used for catalog matching and distributor lookup.

Trans PNP W/res 160HFE S-mini 3P Product overview: UNR511600L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR511600L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR511600L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR511600L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR511600L
TRANS PREBIAS PNP 50V SMINI3

TRANS PREBIAS PNP 50V SMINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1102372-UNR511600L 292-UNR511600L UNR511600L
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP
Package Type SOT3
IC(max) 100 milliamps 100 milliamps 100 milliamps
Power Gain 160 dB
Operating Frequency 150 MHz
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