Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511100L UNR511100L

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 803714-UNR511100L
Packaging: Reel
Mounting Style: SMD
Power - Max: 150mW
Transistor Type: PNP - Pre-Biased
Frequency - Transition: 80MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: SMini3-G1
Manufacturer Package: SC-70, SOT-323
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) at Ic, Vce: 35 at 5mA, 10V

TRANS PREBIAS PNP 150MW SMINI3 Product overview: UNR511100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR511100L can be used for catalog matching and distributor lookup.