Panasonic 150MW Bipolar Transistor UNR511100L

Description
TRANS PREBIAS PNP 150MW SMINI3 Product overview: UNR511100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR511100L can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 150MW SMINI3 Product overview: UNR511100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR511100L can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
150MW Bipolar Transistor
292-UNR511100L
150MW Bipolar Transistor 292-UNR511100L
TRANS PREBIAS PNP 150MW SMINI3 Product overview: UNR511100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR511100L can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 150MW SMINI3 Product overview: UNR511100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150MW. Search-friendly keywords include transistor, BJT, switching, amplification, 150MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR511100L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511100L - 803714-UNR511100L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511100L
803714-UNR511100L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511100L 803714-UNR511100L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 803714-UNR511100L Packaging: Reel Mounting Style: SMD Power - Max: 150mW Transistor Type: PNP - Pre-Biased Frequency - Transition: 80MHz Part Status: Obsolete (End Of Life) Supplier Device Package: SMini3-G1 Manufacturer Package: SC-70, SOT-323 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) at Ic, Vce: 35 at 5mA, 10V

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 803714-UNR511100L
Packaging: Reel
Mounting Style: SMD
Power - Max: 150mW
Transistor Type: PNP - Pre-Biased
Frequency - Transition: 80MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: SMini3-G1
Manufacturer Package: SC-70, SOT-323
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 300μA, 10mA
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) at Ic, Vce: 35 at 5mA, 10V

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR511100L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR511100L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR511100L
TRANS PREBIAS PNP 50V SMINI3

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Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 292-UNR511100L 803714-UNR511100L UNR511100L
Product Name 150MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR511100L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 150 milliwatts
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