Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR421300A UNR421300A

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 798817-UNR421300A Packaging: Tape in Box Mounting Style: Through Hole Package: NS-B1 Power - Max: 300mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 150MHz Part Status: Obsolete(EOL) Family Name: UNR4213 Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Manufacturer Package: NS-B1 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 5mA, 10V Introduction Date: March 12, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 798817-UNR421300A Packaging: Tape in Box Mounting Style: Through Hole Package: NS-B1 Power - Max: 300mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 150MHz Part Status: Obsolete(EOL) Family Name: UNR4213 Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Manufacturer Package: NS-B1 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 5mA, 10V Introduction Date: March 12, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited
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Suppliers

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Product
Description
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR421300A - 798817-UNR421300A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR421300A
798817-UNR421300A
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR421300A 798817-UNR421300A
Manufacturer: Panasonic Electronic Components Win Source Part Number: 798817-UNR421300A Packaging: Tape in Box Mounting Style: Through Hole Package: NS-B1 Power - Max: 300mW Transistor Type: NPN - Pre-Biased Frequency - Transition: 150MHz Part Status: Obsolete(EOL) Family Name: UNR4213 Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Manufacturer Package: NS-B1 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 5mA, 10V Introduction Date: March 12, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Limited

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 798817-UNR421300A
Packaging: Tape in Box
Mounting Style: Through Hole
Package: NS-B1
Power - Max: 300mW
Transistor Type: NPN - Pre-Biased
Frequency - Transition: 150MHz
Part Status: Obsolete(EOL)
Family Name: UNR4213
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Manufacturer Package: NS-B1
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA
Current - Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 80 @ 5mA, 10V
Introduction Date: March 12, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR421300A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR421300A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR421300A
TRANS PREBIAS NPN 50V NS-B1

TRANS PREBIAS NPN 50V NS-B1

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 798817-UNR421300A UNR421300A
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR421300A Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
Packing Method Tape Reel; Tape in Box Tape Reel; Tape & Reel (TR)
IC(max) 5.00E-4 milliamps 100 milliamps
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