Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32AE00L UNR32AE00L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036071-UNR32AE00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini3-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036071-UNR32AE00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini3-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32AE00L - 036071-UNR32AE00L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32AE00L
036071-UNR32AE00L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32AE00L 036071-UNR32AE00L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036071-UNR32AE00L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini3-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036071-UNR32AE00L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SSSMini3-F1
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
100MW Bipolar Transistor
292-UNR32AE00L
100MW Bipolar Transistor 292-UNR32AE00L
TRANS PREBIAS NPN 100MW SSSMINI3 Product overview: UNR32AE00L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR32AE00L can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 100MW SSSMINI3 Product overview: UNR32AE00L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR32AE00L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR32AE00L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR32AE00L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR32AE00L
TRANS PREBIAS NPN 50V SSSMINI3

TRANS PREBIAS NPN 50V SSSMINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 036071-UNR32AE00L 292-UNR32AE00L UNR32AE00L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32AE00L 100MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased
Package Type SOT3; SSSMini3-F1
IC(max) 80 milliamps 80 milliamps
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