Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32A100L UNR32A100L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036066-UNR32A100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini3-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036066-UNR32A100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini3-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32A100L - 036066-UNR32A100L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32A100L
036066-UNR32A100L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32A100L 036066-UNR32A100L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 036066-UNR32A100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini3-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Sufficient

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 036066-UNR32A100L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SSSMini3-F1
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
100MW Bipolar Transistor
293-UNR32A100L
100MW Bipolar Transistor 293-UNR32A100L
TRANS PREBIAS NPN 100MW SSSMINI3 Product overview: UNR32A100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UNR32A100L can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 100MW SSSMINI3 Product overview: UNR32A100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-UNR32A100L can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR32A100L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR32A100L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR32A100L
TRANS PREBIAS NPN 50V SSSMINI3

TRANS PREBIAS NPN 50V SSSMINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 036066-UNR32A100L 293-UNR32A100L UNR32A100L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR32A100L 100MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN - Pre-Biased
Package Type SOT3; SSSMini3-F1
IC(max) 80 milliamps 80 milliamps
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