Panasonic 100MW Bipolar Transistor UNR31A9G0L

Description
TRANS PREBIAS PNP 100MW SSSMINI3 Product overview: UNR31A9G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR31A9G0L can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 100MW SSSMINI3 Product overview: UNR31A9G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR31A9G0L can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
100MW Bipolar Transistor
292-UNR31A9G0L
100MW Bipolar Transistor 292-UNR31A9G0L
TRANS PREBIAS PNP 100MW SSSMINI3 Product overview: UNR31A9G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR31A9G0L can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 100MW SSSMINI3 Product overview: UNR31A9G0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100MW. Search-friendly keywords include transistor, BJT, switching, amplification, 100MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR31A9G0L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR31A9G0L - 1116443-UNR31A9G0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR31A9G0L
1116443-UNR31A9G0L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR31A9G0L 1116443-UNR31A9G0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1116443-UNR31A9G0L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: SSSMini3-F1 Maximum Current Collector: 80mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 30 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1116443-UNR31A9G0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: SSSMini3-F1
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 10V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR31A9G0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR31A9G0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR31A9G0L
TRANS PREBIAS PNP 50V SSSMINI3

TRANS PREBIAS PNP 50V SSSMINI3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 292-UNR31A9G0L 1116443-UNR31A9G0L UNR31A9G0L
Product Name 100MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR31A9G0L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IC(max) 80 milliamps 80 milliamps
VCEO 50 volts 50 volts
PD 100 milliwatts
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