Win Source Part Number: 1102368-UNR222100L
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Frequency - Transition: 200 MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
HTSUS: 8541.21.0075
Mfr: Panasonic Electronic Components
Other Names: UNR222100LDKR,UNR222
Base Product Number: UNR222
Product Status: Obsolete
TRANS PREBIAS NPN 200MW MINI3 Product overview: UNR222100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR222100L can be used for catalog matching and distributor lookup.
TRANS PREBIAS NPN 50V 0.5A MINI3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 1102368-UNR222100L | 292-UNR222100L | UNR222100L |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased | 200MW Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | ||
| Package Type | SOT3 | ||
| IC(max) | 500 milliamps | 500 milliamps | 500 milliamps |
| Power Gain | 40 dB | ||
| Operating Frequency | 200 MHz |