Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased UNR222100L

Description
Win Source Part Number: 1102368-UNR222100L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Frequency - Transition: 200 MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: UNR222100LDKR,UNR222 100LCT-NDR,UNR222100 LDKR-NDR,UNR222100LT R,UNR222100LTR-NDR,U NR222100LCT Base Product Number: UNR222 Product Status: Obsolete
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Description
Win Source Part Number: 1102368-UNR222100L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Frequency - Transition: 200 MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: UNR222100LDKR,UNR222 100LCT-NDR,UNR222100 LDKR-NDR,UNR222100LT R,UNR222100LTR-NDR,U NR222100LCT Base Product Number: UNR222 Product Status: Obsolete
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1102368-UNR222100L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1102368-UNR222100L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1102368-UNR222100L
Win Source Part Number: 1102368-UNR222100L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 500 mA Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V Frequency - Transition: 200 MHz Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1 ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms HTSUS: 8541.21.0075 Mfr: Panasonic Electronic Components Other Names: UNR222100LDKR,UNR222 100LCT-NDR,UNR222100 LDKR-NDR,UNR222100LT R,UNR222100LTR-NDR,U NR222100LCT Base Product Number: UNR222 Product Status: Obsolete

Win Source Part Number: 1102368-UNR222100L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
Frequency - Transition: 200 MHz
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G1
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
HTSUS: 8541.21.0075
Mfr: Panasonic Electronic Components
Other Names: UNR222100LDKR,UNR222100LCT-NDR,UNR222100LDKR-NDR,UNR222100LTR,UNR222100LTR-NDR,UNR222100LCT
Base Product Number: UNR222
Product Status: Obsolete

Buy Now Datasheet
Singapore, Singapore
200MW Bipolar Transistor
292-UNR222100L
200MW Bipolar Transistor 292-UNR222100L
TRANS PREBIAS NPN 200MW MINI3 Product overview: UNR222100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR222100L can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 200MW MINI3 Product overview: UNR222100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR222100L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR222100L - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR222100L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR222100L
TRANS PREBIAS NPN 50V 0.5A MINI3

TRANS PREBIAS NPN 50V 0.5A MINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1102368-UNR222100L 292-UNR222100L UNR222100L
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 200MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN
Package Type SOT3
IC(max) 500 milliamps 500 milliamps 500 milliamps
Power Gain 40 dB
Operating Frequency 200 MHz
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