Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221100L UNR221100L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 109504-UNR221100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 109504-UNR221100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221100L - 109504-UNR221100L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221100L
109504-UNR221100L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221100L 109504-UNR221100L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 109504-UNR221100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 109504-UNR221100L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: Mini3-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Buy Now Datasheet
Singapore, Singapore
Bipolar Transistor
292-UNR221100L
Bipolar Transistor 292-UNR221100L
Trans NPN W/res 35 Hfe Mini 3P Product overview: UNR221100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR221100L can be used for catalog matching and distributor lookup.

Trans NPN W/res 35 Hfe Mini 3P Product overview: UNR221100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR221100L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR221100L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR221100L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR221100L
TRANS PREBIAS NPN 50V 0.1A MINI3

TRANS PREBIAS NPN 50V 0.1A MINI3

Supplier's Site
Single, Pre-Biased Bipolar Transistors - UNR221100L - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
UNR221100L
Single, Pre-Biased Bipolar Transistors UNR221100L
TRANS PREBIAS NPN 200MW MINI3

TRANS PREBIAS NPN 200MW MINI3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 109504-UNR221100L 292-UNR221100L UNR221100L UNR221100L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR221100L Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Polarity NPN; NPN - Pre-Biased NPN - Pre-Biased; NPN
Package Type SOT3; Mini3-G1 SOT23; TO-236-3, SC-59, SOT-23-3
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
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