Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211100L UNR211100L

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 111360-UNR211100L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: Mini3-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

TRANS PREBIAS PNP 200MW MINI3 Product overview: UNR211100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR211100L can be used for catalog matching and distributor lookup.