Panasonic 200MW Bipolar Transistor UNR211100L

Description
TRANS PREBIAS PNP 200MW MINI3 Product overview: UNR211100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR211100L can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 200MW MINI3 Product overview: UNR211100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR211100L can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
200MW Bipolar Transistor
292-UNR211100L
200MW Bipolar Transistor 292-UNR211100L
TRANS PREBIAS PNP 200MW MINI3 Product overview: UNR211100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR211100L can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 200MW MINI3 Product overview: UNR211100L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR211100L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211100L - 111360-UNR211100L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211100L
111360-UNR211100L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211100L 111360-UNR211100L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 111360-UNR211100L Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 80MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: Mini3-G1 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 300μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 111360-UNR211100L
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 80MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: Mini3-G1
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 300μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR211100L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR211100L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR211100L
TRANS PREBIAS PNP 50V 0.1A MINI3

TRANS PREBIAS PNP 50V 0.1A MINI3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 292-UNR211100L 111360-UNR211100L UNR211100L
Product Name 200MW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211100L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 200 milliwatts
TJ -55 C (-67 F)
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