Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211000L UNR211000L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 798815-UNR211000L Packaging: Reel package Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: PNP - Pre-Biased Frequency - Transition: 80MHz Part Status: Obsolete(EOL) Family Name: UNR2110 Resistor - Base (R1) (Ohms): 47k Categories: Discrete Semiconductor Products Manufacturer Package: Mini3-G1 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 160 @ 5mA, 10V Alternative Parts (Cross-Reference): DDTA144TCA-7; FN1L4Z-L; FN1L4Z-T1B; FN1L4Z-T1B-A; Introduction Date: June 26, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 798815-UNR211000L Packaging: Reel package Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: PNP - Pre-Biased Frequency - Transition: 80MHz Part Status: Obsolete(EOL) Family Name: UNR2110 Resistor - Base (R1) (Ohms): 47k Categories: Discrete Semiconductor Products Manufacturer Package: Mini3-G1 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 160 @ 5mA, 10V Alternative Parts (Cross-Reference): DDTA144TCA-7; FN1L4Z-L; FN1L4Z-T1B; FN1L4Z-T1B-A; Introduction Date: June 26, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211000L - 798815-UNR211000L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211000L
798815-UNR211000L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211000L 798815-UNR211000L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 798815-UNR211000L Packaging: Reel package Package: TO-236-3, SC-59, SOT-23-3 Mounting: SMD Power - Max: 200mW Transistor Type: PNP - Pre-Biased Frequency - Transition: 80MHz Part Status: Obsolete(EOL) Family Name: UNR2110 Resistor - Base (R1) (Ohms): 47k Categories: Discrete Semiconductor Products Manufacturer Package: Mini3-G1 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 50V Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA Current - Collector Cutoff (Maximum): 500nA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 160 @ 5mA, 10V Alternative Parts (Cross-Reference): DDTA144TCA-7; FN1L4Z-L; FN1L4Z-T1B; FN1L4Z-T1B-A; Introduction Date: June 26, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 798815-UNR211000L
Packaging: Reel package
Package: TO-236-3, SC-59, SOT-23-3
Mounting: SMD
Power - Max: 200mW
Transistor Type: PNP - Pre-Biased
Frequency - Transition: 80MHz
Part Status: Obsolete(EOL)
Family Name: UNR2110
Resistor - Base (R1) (Ohms): 47k
Categories: Discrete Semiconductor Products
Manufacturer Package: Mini3-G1
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Vce Saturation (Maximum) @ Ib, Ic: 250mV @ 300μA, 10mA
Current - Collector Cutoff (Maximum): 500nA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 160 @ 5mA, 10V
Alternative Parts (Cross-Reference): DDTA144TCA-7; FN1L4Z-L; FN1L4Z-T1B; FN1L4Z-T1B-A;
Introduction Date: June 26, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
200MW Bipolar Transistor
292-UNR211000L
200MW Bipolar Transistor 292-UNR211000L
TRANS PREBIAS PNP 200MW MINI3 Product overview: UNR211000L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR211000L can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 200MW MINI3 Product overview: UNR211000L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200MW. Search-friendly keywords include transistor, BJT, switching, amplification, 200MW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-UNR211000L can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - UNR211000L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
UNR211000L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) UNR211000L
TRANS PREBIAS PNP 50V 0.1A MINI3

TRANS PREBIAS PNP 50V 0.1A MINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 798815-UNR211000L 292-UNR211000L UNR211000L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - UNR211000L 200MW Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP
Package Type SOT3; SOT23
Packing Method Tape Reel; Reel package Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 5.00E-4 milliamps 100 milliamps 100 milliamps
Power Gain 160 dB
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