Panasonic Single FETs, MOSFETs SK8603170L

MOSFET N-CH 30V 20A/59A 8HSO

Power Field-Effect Transistor, 20A I(D), 30V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSO8-F4-B, SC-111BC, 8 PIN Product overview: SK8603170L from Panasonic is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20A, 30V, 0.0058ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20A, 30V, 0.0058ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SK8603170L can be used for catalog matching and distributor lookup.

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 794466-SK8603170L
Packaging: Reel package
Operating Temperature Range: 150°C (TJ)
Package: 8-PowerSMD, Flat Leads
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 59A (Tc)
Family Name: SK8603170L
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: 8-HSO
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 3V @ 2.56mA
Gate Charge (Qg) (Maximum) @ Vgs: 17nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 2940pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 2.8W (Ta), 24W (Tc)
Rds On (Maximum) @ Id, Vgs: 4.1 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): TSM045NA03CR RLG; RS1E200GNTB; RS1E180BNTB; TSM35N03PQ56 RLG;
Introduction Date: May 31, 2013
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance