Panasonic MOSFET PGA26E19BA

The PGA26E19BA is an N-channel enhancement mode GaN transistor designed for power switching applications. It is packaged in an 8 mm × 8 mm DFN package with a maximum drain-source voltage of 600 V and a continuous drain current of 13 A at 25 °C case temperature. The device exhibits a drain-source on-state resistance of 190 mΩ at 25 °C and 290 mΩ at 150 °C, with a typical gate threshold voltage of 1.2 V. Thermal resistance from junction to case is 1.9 °C/W, and junction temperature operates up to 150 °C. The part meets absolute maximum ratings for dv/dt up to 200 V/ns and includes a reverse conduction characteristic with zero reverse recovery charge. Pinout specifies separate source pins requiring proper gate driver connection.