Panasonic MOSFET PGA26E07BA

The PGA26E07BA is an N-channel enhancement mode GaN power FET designed for power switching applications, packaged in an 8x8 mm DFN. It has a drain-source voltage rating of 600 V DC and 750 V pulsed, with a continuous drain current of 26 A at 25°C case temperature. The device dissipates up to 96 W at 25°C case temperature and operates with a maximum junction temperature of 150°C. Its drain-source on-state resistance is 70 mΩ at 25°C and 8 A drain current. The gate threshold voltage ranges from 0.9 V to 1.6 V. Input, output, and reverse transfer capacitances are 405 pF, 71 pF, and 0.4 pF respectively at 400 V drain-source voltage. Turn-on and turn-off delays are 3.7 ns and 5.5 ns, with rise and fall times of 5.6 ns and 2.4 ns. The storage temperature range is -55°C to 150°C.