Panasonic TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM861270LBF MTM861270LBF

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 024587-MTM861270LBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 540mW (Ta) Family Name: MTM861270BF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: WSSMini6-F1 Dimension: 6-SMD, Flat Leads Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 1.1V @ 1mA Max Input Capacitance: 300pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4V Alternative Parts (Cross-Reference): Si1067X-T1-GE3; Si3451DV-T1-GE3; Si1067X; Si1413DH-T1-GE3 ; Introduction Date: January 01, 2000 ECCN: EAR99 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 024587-MTM861270LBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 540mW (Ta) Family Name: MTM861270BF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: WSSMini6-F1 Dimension: 6-SMD, Flat Leads Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 1.1V @ 1mA Max Input Capacitance: 300pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4V Alternative Parts (Cross-Reference): Si1067X-T1-GE3; Si3451DV-T1-GE3; Si1067X; Si1413DH-T1-GE3 ; Introduction Date: January 01, 2000 ECCN: EAR99 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM861270LBF - 024587-MTM861270LBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM861270LBF
024587-MTM861270LBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM861270LBF 024587-MTM861270LBF
Manufacturer: Panasonic Electronic Components Win Source Part Number: 024587-MTM861270LBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 540mW (Ta) Family Name: MTM861270BF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: WSSMini6-F1 Dimension: 6-SMD, Flat Leads Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 1.1V @ 1mA Max Input Capacitance: 300pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4V Alternative Parts (Cross-Reference): Si1067X-T1-GE3; Si3451DV-T1-GE3; Si1067X; Si1413DH-T1-GE3 ; Introduction Date: January 01, 2000 ECCN: EAR99 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 024587-MTM861270LBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 540mW (Ta)
Family Name: MTM861270BF
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: WSSMini6-F1
Dimension: 6-SMD, Flat Leads
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 1mA
Max Input Capacitance: 300pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 120 mOhm @ 1A, 4V
Alternative Parts (Cross-Reference): Si1067X-T1-GE3; Si3451DV-T1-GE3; Si1067X; Si1413DH-T1-GE3 ;
Introduction Date: January 01, 2000
ECCN: EAR99
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
P-Channel SMD -2A -20V MOSFET Transistor
278-MTM861270LBF
P-Channel SMD -2A -20V MOSFET Transistor 278-MTM861270LBF
P-Channel JFET, -2A ID, -20V Vdss, 120mR Rds(on), SMD Product overview: MTM861270LBF from Panasonic is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -2A, -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -2A, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTM861270LBF can be used for catalog matching and distributor lookup.

P-Channel JFET, -2A ID, -20V Vdss, 120mR Rds(on), SMD Product overview: MTM861270LBF from Panasonic is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, SMD, -2A, -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -2A, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-MTM861270LBF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET PCH MOS FET FLT LD 1.6x1.6mm

MOSFET PCH MOS FET FLT LD 1.6x1.6mm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTM861270LBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTM861270LBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTM861270LBF
MOSFET P-CH 20V 2A WSSMINI6-F1

MOSFET P-CH 20V 2A WSSMINI6-F1

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 024587-MTM861270LBF 278-MTM861270LBF MTM861270LBF MTM861270LBF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM861270LBF P-Channel SMD -2A -20V MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 20 volts
PD 540 milliwatts 540 milliwatts
Unlock Full Specs
to access all available technical data