Panasonic FET, MOSFET Arrays MTM78E2B0LBF

Description
Mosfet Array 2 N-Channel (Dual) 20V 4A 150mW Surface Mount WSMINI8-F1-B
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Description
Mosfet Array 2 N-Channel (Dual) 20V 4A 150mW Surface Mount WSMINI8-F1-B
Request a Quote Datasheet

Suppliers

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Description
Supplier Links
FET, MOSFET Arrays - MTM78E2B0LBFTR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
MTM78E2B0LBFTR-ND
FET, MOSFET Arrays MTM78E2B0LBFTR-ND
Mosfet Array 2 N-Channel (Dual) 20V 4A 150mW Surface Mount WSMINI8-F1-B

Mosfet Array 2 N-Channel (Dual) 20V 4A 150mW Surface Mount WSMINI8-F1-B

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM78E2B0LBF - 024586-MTM78E2B0LBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM78E2B0LBF
024586-MTM78E2B0LBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM78E2B0LBF 024586-MTM78E2B0LBF
Manufacturer: Panasonic Electronic Components Win Source Part Number: 024586-MTM78E2B0LBF Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: WSMini8-F1-B Maximum Power Dissipation: 150mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 1.3V @ 1mA Max Input Capacitance: 1100pF @ 10V Maximum Rds On at Id,Vgs: 25 mOhm @ 2A, 4V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 024586-MTM78E2B0LBF
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: WSMini8-F1-B
Maximum Power Dissipation: 150mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 1.3V @ 1mA
Max Input Capacitance: 1100pF @ 10V
Maximum Rds On at Id,Vgs: 25 mOhm @ 2A, 4V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTM78E2B0LBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTM78E2B0LBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTM78E2B0LBF
MOSFET 2N-CH 20V 4A WSMINI8-F1-B

MOSFET 2N-CH 20V 4A WSMINI8-F1-B

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number MTM78E2B0LBFTR-ND 024586-MTM78E2B0LBF MTM78E2B0LBF
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM78E2B0LBF Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-SMD, Flat Leads SOT3; WSMini8-F1-B
Polarity N-Channel
V(BR)DSS 20 volts
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