Panasonic Single FETs, MOSFETs MTM231232LBF

Description
MOSFET P-CH 20V 3A SMINI3-G1-B
Request a Quote Datasheet
Description
MOSFET P-CH 20V 3A SMINI3-G1-B
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - MTM231232LBF - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
MTM231232LBF
Single FETs, MOSFETs MTM231232LBF
MOSFET P-CH 20V 3A SMINI3-G1-B

MOSFET P-CH 20V 3A SMINI3-G1-B

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM231232LBF - 024583-MTM231232LBF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM231232LBF
024583-MTM231232LBF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM231232LBF 024583-MTM231232LBF
Manufacturer: Panasonic Electronic Components Win Source Part Number: 024583-MTM231232LBF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 500mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SC-70-3 (SOT323) Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A (Ta) Gate-Source Threshold Voltage: 1.3V @ 1mA Max Input Capacitance: 1000pF @ 10V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 55 mOhm @ 1A, 4V Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 024583-MTM231232LBF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SC-70-3 (SOT323)
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A (Ta)
Gate-Source Threshold Voltage: 1.3V @ 1mA
Max Input Capacitance: 1000pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 55 mOhm @ 1A, 4V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - MTM231232LBFTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
MTM231232LBFTR-ND
Single FETs, MOSFETs MTM231232LBFTR-ND
P-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SMini3-G1-B

P-Channel 20V 3A (Ta) 500mW (Ta) Surface Mount SMini3-G1-B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - MTM231232LBF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MTM231232LBF
Discrete Semiconductor Products - Transistors - FETs, MOSFETs MTM231232LBF
MOSFET P-CH 20V 3A SMINI3-G1-B

MOSFET P-CH 20V 3A SMINI3-G1-B

Supplier's Site
Sheung Wan, Hong Kong
MOSFET P-ch Power MOSFET SOT-323

MOSFET P-ch Power MOSFET SOT-323

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number MTM231232LBF 024583-MTM231232LBF MTM231232LBFTR-ND MTM231232LBF MTM231232LBF
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - MTM231232LBF Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 3000 milliamps
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