The MCH6627 is a dual MOSFET package integrating an N-channel and P-channel silicon MOSFET for general-purpose switching, designed for high-density mounting with low ON-resistance and 4V drive capability. It is housed in a MCPH6 package with dimensions of 2.0mm x 2.17mm and six terminals. The N-channel MOSFET supports a 30V drain-to-source voltage and 1.4A continuous drain current, while the P-channel supports -30V and -1.0A. Both feature ON-resistance of 230-300 mΩ (N-channel) and 420-550 mΩ (P-channel) at 10V gate drive, and total gate charge of 2.5nC and 2.6nC respectively. The device operates with a maximum channel temperature of 150°C and is rated for storage from -55°C to +150°C. Power dissipation is limited to 0.8W when mounted on a 900mm² x 0.8mm ceramic board.
N-Channel And P-Channel MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MCH6627-TL-E |
| Polarity | N-Channel; P-Channel |