P-Channel Silicon MOSFET designed for general-purpose switching applications, available in the MCPH3 package with a maximum drain-to-source voltage of 100 V, continuous drain current of 0.6 A, and power dissipation of 1 W when mounted on a ceramic board. It features low ON-resistance as low as 1.1 Ω at -10 V gate drive, ultrahigh-speed switching with turn-on delay of 8.5 ns and fall time of 16 ns, and operates with a 4 V gate drive. The device has a channel temperature rating of 150 °C and storage temperature range of -55 °C to +150 °C.
P-Channel Silicon MOSFET For General-Purpose Switching Device Application
| Rochester Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | MCH3322-EBM-TL-E |
| Polarity | P-Channel |