Panasonic MCH3322-EBM-TL-E

Description
P-Channel Silicon MOSFET For General-Purpose Switching Device Application
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Description
P-Channel Silicon MOSFET For General-Purpose Switching Device Application
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Datasheet
Datasheet Summary
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P-Channel Silicon MOSFET designed for general-purpose switching applications, available in the MCPH3 package with a maximum drain-to-source voltage of 100 V, continuous drain current of 0.6 A, and power dissipation of 1 W when mounted on a ceramic board. It features low ON-resistance as low as 1.1 Ω at -10 V gate drive, ultrahigh-speed switching with turn-on delay of 8.5 ns and fall time of 16 ns, and operates with a 4 V gate drive. The device has a channel temperature rating of 150 °C and storage temperature range of -55 °C to +150 °C.

Datasheet Summary
Powered by GS/AI

P-Channel Silicon MOSFET designed for general-purpose switching applications, available in the MCPH3 package with a maximum drain-to-source voltage of 100 V, continuous drain current of 0.6 A, and power dissipation of 1 W when mounted on a ceramic board. It features low ON-resistance as low as 1.1 Ω at -10 V gate drive, ultrahigh-speed switching with turn-on delay of 8.5 ns and fall time of 16 ns, and operates with a 4 V gate drive. The device has a channel temperature rating of 150 °C and storage temperature range of -55 °C to +150 °C.

Suppliers

Company
Product
Description
Supplier Links
 - MCH3322-EBM-TL-E - Rochester Electronics
Newburyport, MA, United States
P-Channel Silicon MOSFET For General-Purpose Switching Device Application

P-Channel Silicon MOSFET For General-Purpose Switching Device Application

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MCH3322-EBM-TL-E
Polarity P-Channel
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