Panasonic MOSFET FCAB21350L1

Description
MOSFET Wide Pad Dual Nchannel MOSFET
Description
MOSFET Wide Pad Dual Nchannel MOSFET
Datasheet
Datasheet Summary
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Dual N-channel MOSFET in CSP package for lithium-ion battery protection circuits, with a source-source ON resistance of 2.2 mΩ at VGS = 3.8 V, source-source voltage rating of 12 V, and continuous source current ratings of 12 A and 27 A for the two channels. The device features a gate-source voltage rating of ±8 V, total power dissipation of 2.1 W on a ceramic substrate, and operating junction temperature up to 150°C. It is RoHS compliant and supplied in an embossed tape reel package of 1,000 pcs. Marked with '3M'.

Datasheet Summary
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Dual N-channel MOSFET in CSP package for lithium-ion battery protection circuits, with a source-source ON resistance of 2.2 mΩ at VGS = 3.8 V, source-source voltage rating of 12 V, and continuous source current ratings of 12 A and 27 A for the two channels. The device features a gate-source voltage rating of ±8 V, total power dissipation of 2.1 W on a ceramic substrate, and operating junction temperature up to 150°C. It is RoHS compliant and supplied in an embossed tape reel package of 1,000 pcs. Marked with '3M'.

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Sheung Wan, Hong Kong
MOSFET Wide Pad Dual Nchannel MOSFET

MOSFET Wide Pad Dual Nchannel MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FCAB21350L1
Product Name MOSFET
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