Panasonic FET, MOSFET Arrays FC8V33030L

Description
MOSFET 2N-CH 33V 6.5A WMINI8
Request a Quote Datasheet
Description
MOSFET 2N-CH 33V 6.5A WMINI8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - FC8V33030L - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
FC8V33030L
FET, MOSFET Arrays FC8V33030L
MOSFET 2N-CH 33V 6.5A WMINI8

MOSFET 2N-CH 33V 6.5A WMINI8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FC8V33030L - 1037856-FC8V33030L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FC8V33030L
1037856-FC8V33030L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FC8V33030L 1037856-FC8V33030L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1037856-FC8V33030L Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: FC8V3303 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: WMini8-F1 Maximum Power Dissipation: 1W Drain-Source Breakdown Voltage: 33V Continuous Drain Current at 25°C: 6.5A Gate-Source Threshold Voltage: 2.5V @ 480μA Max Gate Charge: 3.8nC @ 4.5V Max Input Capacitance: 360pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 3.3A, 10V Introduction Date: February 20, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2026 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Limited

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1037856-FC8V33030L
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: FC8V3303
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: WMini8-F1
Maximum Power Dissipation: 1W
Drain-Source Breakdown Voltage: 33V
Continuous Drain Current at 25°C: 6.5A
Gate-Source Threshold Voltage: 2.5V @ 480μA
Max Gate Charge: 3.8nC @ 4.5V
Max Input Capacitance: 360pF @ 10V
Maximum Rds On at Id,Vgs: 20 mOhm @ 3.3A, 10V
Introduction Date: February 20, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
PANASONIC ELECTRONIC COMPONENTS FC8V33030L Dual MOSFET, Dual N Channel, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V - 590-FC8V33030L - Utmel Electronic Limited
Hong Kong, China
PANASONIC ELECTRONIC COMPONENTS FC8V33030L Dual MOSFET, Dual N Channel, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V
590-FC8V33030L
PANASONIC ELECTRONIC COMPONENTS FC8V33030L Dual MOSFET, Dual N Channel, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V 590-FC8V33030L
PANASONIC ELECTRONIC COMPONENTS FC8V33030L Dual MOSFET, Dual N Channel, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V

PANASONIC ELECTRONIC COMPONENTS FC8V33030L Dual MOSFET, Dual N Channel, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FC8V33030L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FC8V33030L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FC8V33030L
MOSFET 2N-CH 33V 6.5A WMINI8

MOSFET 2N-CH 33V 6.5A WMINI8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Nch+Nch MOSFET 2.9x2.8mm Flat lead

MOSFET Nch+Nch MOSFET 2.9x2.8mm Flat lead

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FC8V33030L 1037856-FC8V33030L 590-FC8V33030L FC8V33030L FC8V33030L
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - FC8V33030L PANASONIC ELECTRONIC COMPONENTS FC8V33030L Dual MOSFET, Dual N Channel, 6.5 A, 33 V, 0.015 ohm, 10 V, 1 V Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide) SILICON
V(BR)DSS 33 volts 33 volts 33 volts
IDSS 6500 milliamps
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
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