Panasonic MOSFET FC6B21150L1

Description
MOSFET WL-CSP Dual Nchannel MOSFET
Description
MOSFET WL-CSP Dual Nchannel MOSFET
Datasheet
Datasheet Summary
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FC6B21150L1 is a dual N-channel MOSFET in a CSP (Chip Size Package) for lithium-ion battery protection circuits. It features a source-source ON resistance of 4.3 mΩ typical at VGS = 3.8 V and a source-source breakdown voltage of 12 V. The device supports a continuous source current of up to 8 A for FET1 and 17 A for FET2, with a maximum total power dissipation of 2.1 W on a ceramic substrate. Thermal resistance from channel to ambient is 59 °C/W on ceramic, and the channel temperature rating is 150 °C. It is RoHS compliant and supplied in an embossed tape-reel package of 1,000 pcs per reel. Gate-source voltage rating is ±10.5 V, and gate-source threshold voltage ranges from 0.35 V to 1.4 V.

Datasheet Summary
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FC6B21150L1 is a dual N-channel MOSFET in a CSP (Chip Size Package) for lithium-ion battery protection circuits. It features a source-source ON resistance of 4.3 mΩ typical at VGS = 3.8 V and a source-source breakdown voltage of 12 V. The device supports a continuous source current of up to 8 A for FET1 and 17 A for FET2, with a maximum total power dissipation of 2.1 W on a ceramic substrate. Thermal resistance from channel to ambient is 59 °C/W on ceramic, and the channel temperature rating is 150 °C. It is RoHS compliant and supplied in an embossed tape-reel package of 1,000 pcs per reel. Gate-source voltage rating is ±10.5 V, and gate-source threshold voltage ranges from 0.35 V to 1.4 V.

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Sheung Wan, Hong Kong
MOSFET WL-CSP Dual Nchannel MOSFET

MOSFET WL-CSP Dual Nchannel MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FC6B21150L1
Product Name MOSFET
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