MOSFET 2N-CH 60V 0.1A SSMINI6
Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1173545-FC6946010R
Packaging: Reel
Mounting Style: SMD
FET Feature: Logic Level Gate
Transistor Polarity: 2 N-Channel (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: SSMini6-F3-B
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.panasonic.com/in
Manufacturer Package: SOT-563, SOT-666
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Family Part Number: FC694601
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Maximum Power: 125mW
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 100mA
Rds On (Maximum) at Id, Vgs: 12Ohm at 10mA, 4V
Gate Source Voltage(th) (Maximum) at Id: 1.5V at 1μA
Input Capacitance (Ciss) (Maximum) at Vds: 12pF at 3V
N-Channel JFET, 60V, 100mA, 2-Element, SOT-666 Product overview: FC6946010R from Panasonic is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V, 100mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100mA, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-FC6946010R can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 60V 0.1A SSMINI6
MOSFET NCH+NCH MOS FET FLT LD 1.6x1.6mm
MOSFET, DUAL N CHANNEL, 60V, 6OHM, 100mA, SOT-666, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100mA; On Resistance Rds(on):6ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 60V, 6OHM, 100mA, SOT-666; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100mA; On Resistance Rds(on):6ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4VRoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FC6946010R | 1173545-FC6946010R | 289-FC6946010R | FC6946010R | FC6946010R | 53W8099 |
| Product Name | FET, MOSFET Arrays | FETs - Arrays - FC6946010R | N-Channel 60V 100mA MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N Channel, 60V, 6Ohm, 100Ma, Sot-666, Full Reel; Transistor Polarity Panasonic |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| IDSS | 100 milliamps | 100 milliamps | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | -55 C (-67 F) |
