Dual N-channel MOSFET with integrated gate resistors for lithium-ion battery protection, housed in a CSP (Chip Size Package) with dimensions of 3.0 mm × 0.6 mm × 1.0 mm. It has a source-source voltage rating of 12 V, gate-source voltage of ±8 V, and continuous source current of 1.5 A. The typical source-source ON-resistance is 80 mΩ at VGS = 3.8 V and 0.75 A. Thermal resistance is 390°C/W on FR4 board and 208°C/W on ceramic substrate. It operates with a channel temperature up to 150°C and is RoHS compliant. The device features a body diode forward voltage of 0.6 to 1.2 V and gate-source threshold voltage between 0.35 V and 1.4 V.
MOSFET Gate res integrated Dual Nch MOSFET
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | FC4B21300L1 |
| Product Name | MOSFET |
