Panasonic DTC123TM3T5G

Description
NPN Bipolar Digital Transistor (BRT)
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Description
NPN Bipolar Digital Transistor (BRT)
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Datasheet
Datasheet Summary
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DTC123TM3T5G is an NPN bipolar digital transistor with integrated bias resistors, housed in a SOT-723 package. It has a maximum collector-base voltage of 50 V, collector-emitter voltage of 50 V, and continuous collector current of 100 mA. The device features a typical input resistor of 2.2 kΩ, collector-emitter saturation voltage of 0.25 V, and DC current gain of 160 to 350 at 5 mA collector current. Maximum power dissipation is 260 mW at 25°C with a derating of 2.0 mW/°C. The junction and storage temperature range is -55°C to +150°C. The device is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified.

Datasheet Summary
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DTC123TM3T5G is an NPN bipolar digital transistor with integrated bias resistors, housed in a SOT-723 package. It has a maximum collector-base voltage of 50 V, collector-emitter voltage of 50 V, and continuous collector current of 100 mA. The device features a typical input resistor of 2.2 kΩ, collector-emitter saturation voltage of 0.25 V, and DC current gain of 160 to 350 at 5 mA collector current. Maximum power dissipation is 260 mW at 25°C with a derating of 2.0 mW/°C. The junction and storage temperature range is -55°C to +150°C. The device is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified.

Suppliers

Company
Product
Description
Supplier Links
 - DTC123TM3T5G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number DTC123TM3T5G
Polarity NPN
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