Panasonic DTC113EET1G

Description
NPN Bipolar Digital Transistor (BRT)
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Description
NPN Bipolar Digital Transistor (BRT)
Request a Quote
Datasheet
Datasheet Summary
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DTC113EET1G is an NPN bipolar digital transistor (BRT) with a monolithic bias resistor network, designed to replace discrete transistor and resistor combinations. It comes in an SC-75 package, measuring 1.60 mm by 0.80 mm, and is rated for a maximum collector current of 100 mA, collector-emitter voltage of 50 V, and operates over a junction temperature range of -55°C to +150°C. The device has a typical power dissipation of 200 mW at 25°C, with a thermal resistance of 600°C/W junction to ambient on a minimum pad. It is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified for automotive applications.

Datasheet Summary
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DTC113EET1G is an NPN bipolar digital transistor (BRT) with a monolithic bias resistor network, designed to replace discrete transistor and resistor combinations. It comes in an SC-75 package, measuring 1.60 mm by 0.80 mm, and is rated for a maximum collector current of 100 mA, collector-emitter voltage of 50 V, and operates over a junction temperature range of -55°C to +150°C. The device has a typical power dissipation of 200 mW at 25°C, with a thermal resistance of 600°C/W junction to ambient on a minimum pad. It is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified for automotive applications.

Suppliers

Company
Product
Description
Supplier Links
 - DTC113EET1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Digital Transistor (BRT)

NPN Bipolar Digital Transistor (BRT)

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number DTC113EET1G
Polarity NPN
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