DTC113EET1G is an NPN bipolar digital transistor (BRT) with a monolithic bias resistor network, designed to replace discrete transistor and resistor combinations. It comes in an SC-75 package, measuring 1.60 mm by 0.80 mm, and is rated for a maximum collector current of 100 mA, collector-emitter voltage of 50 V, and operates over a junction temperature range of -55°C to +150°C. The device has a typical power dissipation of 200 mW at 25°C, with a thermal resistance of 600°C/W junction to ambient on a minimum pad. It is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified for automotive applications.
NPN Bipolar Digital Transistor (BRT)
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | DTC113EET1G |
| Polarity | NPN |