Panasonic Single, Pre-Biased Bipolar Transistors DRC5114E0L

Description
TRANS PREBIAS NPN 150MW SMINI3
Request a Quote Datasheet
Description
TRANS PREBIAS NPN 150MW SMINI3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single, Pre-Biased Bipolar Transistors - DRC5114E0L - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
DRC5114E0L
Single, Pre-Biased Bipolar Transistors DRC5114E0L
TRANS PREBIAS NPN 150MW SMINI3

TRANS PREBIAS NPN 150MW SMINI3

Supplier's Site
Single, Pre-Biased Bipolar Transistors - DRC5114E0LTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DRC5114E0LTR-ND
Single, Pre-Biased Bipolar Transistors DRC5114E0LTR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SMini3-F2-B

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount SMini3-F2-B

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRC5114E0L - 014581-DRC5114E0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRC5114E0L
014581-DRC5114E0L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRC5114E0L 014581-DRC5114E0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 014581-DRC5114E0L Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SMini3-F2-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient Quantity per package: 3k pcs

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 014581-DRC5114E0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SMini3-F2-B
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
Quantity per package: 3k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRC5114E0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRC5114E0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRC5114E0L
TRANS PREBIAS NPN 50V SMINI3

TRANS PREBIAS NPN 50V SMINI3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number DRC5114E0L DRC5114E0LTR-ND 014581-DRC5114E0L DRC5114E0L
Product Name Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRC5114E0L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN - Pre-Biased; NPN NPN NPN; NPN - Pre-Biased
Package Type SC-85 SC-85 SOT3; SMini3-F2-B
IC(max) 100 milliamps 100 milliamps
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