Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA9123J0L DRA9123J0L

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 014568-DRA9123J0L Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSMini3-F3-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 014568-DRA9123J0L Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSMini3-F3-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

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Product
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA9123J0L - 014568-DRA9123J0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA9123J0L
014568-DRA9123J0L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA9123J0L 014568-DRA9123J0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 014568-DRA9123J0L Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSMini3-F3-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 014568-DRA9123J0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SSMini3-F3-B
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Singapore
0.1A 50V Bipolar Transistor
292-DRA9123J0L
0.1A 50V Bipolar Transistor 292-DRA9123J0L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN Product overview: DRA9123J0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRA9123J0L can be used for catalog matching and distributor lookup.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN Product overview: DRA9123J0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRA9123J0L can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRA9123J0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRA9123J0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRA9123J0L
TRANS PREBIAS PNP 50V SSMINI3

TRANS PREBIAS PNP 50V SSMINI3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 014568-DRA9123J0L 292-DRA9123J0L DRA9123J0L
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA9123J0L 0.1A 50V Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP - Pre-Biased PNP
Package Type SOT3; SSMini3-F3-B
IC(max) 100 milliamps 100 milliamps
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