Panasonic Single, Pre-Biased Bipolar Transistors DRA3123J0L

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B
Request a Quote Datasheet

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Single, Pre-Biased Bipolar Transistors - DRA3123J0LCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DRA3123J0LCT-ND
Single, Pre-Biased Bipolar Transistors DRA3123J0LCT-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - DRA3123J0LTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DRA3123J0LTR-ND
Single, Pre-Biased Bipolar Transistors DRA3123J0LTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA3123J0L - 014560-DRA3123J0L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA3123J0L
014560-DRA3123J0L
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA3123J0L 014560-DRA3123J0L
Manufacturer: Panasonic Electronic Components Win Source Part Number: 014560-DRA3123J0L Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSSMini3-F2-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient Quantity per package: 10k pcs

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 014560-DRA3123J0L
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SSSMini3-F2-B
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
Quantity per package: 10k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRA3123J0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRA3123J0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRA3123J0L
TRANS PREBIAS PNP 50V SSSMINI3

TRANS PREBIAS PNP 50V SSSMINI3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number DRA3123J0LCT-ND 014560-DRA3123J0L DRA3123J0L
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA3123J0L Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Pre-Biased
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