Panasonic Single, Pre-Biased Bipolar Transistors DRA3113Z0L

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B
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Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B
Request a Quote Datasheet

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Single, Pre-Biased Bipolar Transistors - DRA3113Z0LTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
DRA3113Z0LTR-ND
Single, Pre-Biased Bipolar Transistors DRA3113Z0LTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 100mW Surface Mount SSSMini3-F2-B

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 965933-DRA3113Z0L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
965933-DRA3113Z0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 965933-DRA3113Z0L
Win Source Part Number: 965933-DRA3113Z0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 10,000 Mounting: SMD (SMT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B Alternative Parts (Cross-Reference): DTA114YMT2L; DTC143TMT2L; 2SAR523MT2L; DRA3144V0L; DSA300100L; DRA3143E0LDRA3113Z0L .; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: DRA3113Z0LCT,DRA3113 Z0L-ND,DRA3113Z0LTR, DRA3113Z0LDKR Base Product Number: DRA3113

Win Source Part Number: 965933-DRA3113Z0L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 10,000
Mounting: SMD (SMT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B
Alternative Parts (Cross-Reference): DTA114YMT2L; DTC143TMT2L; 2SAR523MT2L; DRA3144V0L; DSA300100L; DRA3143E0LDRA3113Z0L.;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
HTSUS: 8541.21.0095
Mfr: Panasonic Electronic Components
Other Names: DRA3113Z0LCT,DRA3113Z0L-ND,DRA3113Z0LTR,DRA3113Z0LDKR
Base Product Number: DRA3113

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRA3113Z0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRA3113Z0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRA3113Z0L
TRANS PREBIAS PNP 50V SSSMINI3

TRANS PREBIAS PNP 50V SSSMINI3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number DRA3113Z0LTR-ND 965933-DRA3113Z0L DRA3113Z0L
Product Name Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type SOT-723 SOT3
IC(max) 100 milliamps 100 milliamps
Power Gain 30 dB
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