Panasonic Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased DRA3113Z0L

Description
Win Source Part Number: 965933-DRA3113Z0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 10,000 Mounting: SMD (SMT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B Alternative Parts (Cross-Reference): DTA114YMT2L; DTC143TMT2L; 2SAR523MT2L; DRA3144V0L; DSA300100L; DRA3143E0LDRA3113Z0L .; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: DRA3113Z0LCT,DRA3113 Z0L-ND,DRA3113Z0LTR, DRA3113Z0LDKR Base Product Number: DRA3113
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 965933-DRA3113Z0L - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRA3113Z0L - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 965933-DRA3113Z0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 10,000 Mounting: SMD (SMT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B Alternative Parts (Cross-Reference): DTA114YMT2L; DTC143TMT2L; 2SAR523MT2L; DRA3144V0L; DSA300100L; DRA3143E0LDRA3113Z0L .; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: DRA3113Z0LCT,DRA3113 Z0L-ND,DRA3113Z0LTR, DRA3113Z0LDKR Base Product Number: DRA3113
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 965933-DRA3113Z0L - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
965933-DRA3113Z0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 965933-DRA3113Z0L
Win Source Part Number: 965933-DRA3113Z0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 10,000 Mounting: SMD (SMT) Power - Max: 100 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V Package / Case: SOT-723 Supplier Device Package: SSSMini3-F2-B Alternative Parts (Cross-Reference): DTA114YMT2L; DTC143TMT2L; 2SAR523MT2L; DRA3144V0L; DSA300100L; DRA3143E0LDRA3113Z0L .; ECCN: EAR99 Fake Threat In the Open Market: 84 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: DRA3113Z0LCT,DRA3113 Z0L-ND,DRA3113Z0LTR, DRA3113Z0LDKR Base Product Number: DRA3113

Win Source Part Number: 965933-DRA3113Z0L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 10,000
Mounting: SMD (SMT)
Power - Max: 100 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
Package / Case: SOT-723
Supplier Device Package: SSSMini3-F2-B
Alternative Parts (Cross-Reference): DTA114YMT2L; DTC143TMT2L; 2SAR523MT2L; DRA3144V0L; DSA300100L; DRA3143E0LDRA3113Z0L.;
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
HTSUS: 8541.21.0095
Mfr: Panasonic Electronic Components
Other Names: DRA3113Z0LCT,DRA3113Z0L-ND,DRA3113Z0LTR,DRA3113Z0LDKR
Base Product Number: DRA3113

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRA3113Z0L - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRA3113Z0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRA3113Z0L
TRANS PREBIAS PNP 50V SSSMINI3

TRANS PREBIAS PNP 50V SSSMINI3

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 965933-DRA3113Z0L DRA3113Z0L
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP
Package Type SOT3
IC(max) 100 milliamps 100 milliamps
Power Gain 30 dB
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