Panasonic TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DRA2123J0L DRA2123J0L

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 801970-DRA2123J0L
Packaging: Reel
Mounting Style: SMD
Power - Max: 200mW
Transistor Type: PNP - Pre-Biased
Supplier Device Package: Mini3-G3-B
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: High
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 250mV at 500μA, 10mA
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Part Number Series: DRA2123
DC Current Gain (hFE) (Min) at Ic, Vce: 80 at 5mA, 10V

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN Product overview: DRA2123J0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V, 59A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, 59A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRA2123J0L can be used for catalog matching and distributor lookup.