Panasonic 0.1A 50V 59A Bipolar Transistor DRA2114Y0L

Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN Product overview: DRA2114Y0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V, 59A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, 59A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRA2114Y0L can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN Product overview: DRA2114Y0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V, 59A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, 59A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRA2114Y0L can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
0.1A 50V 59A Bipolar Transistor
292-DRA2114Y0L
0.1A 50V 59A Bipolar Transistor 292-DRA2114Y0L
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN Product overview: DRA2114Y0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V, 59A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, 59A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRA2114Y0L can be used for catalog matching and distributor lookup.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AA, HALOGEN FREE AND ROHS COMPLIANT, MINI3-G3-B, SC-59A, 3 PIN Product overview: DRA2114Y0L from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V, 59A. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, 59A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DRA2114Y0L can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased - 1139815-DRA2114Y0L - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased
1139815-DRA2114Y0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased 1139815-DRA2114Y0L
Win Source Part Number: 1139815-DRA2114Y0L Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G3-B Alternative Parts (Cross-Reference): DRA2114Y0L.; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms HTSUS: 8541.21.0095 Mfr: Panasonic Electronic Components Other Names: DRA2114Y0LTR,DRA2114 Y0LDKR,DRA2114Y0LCT, DRA2114Y0L-ND Base Product Number: DRA2114

Win Source Part Number: 1139815-DRA2114Y0L
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Mini3-G3-B
Alternative Parts (Cross-Reference): DRA2114Y0L.;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
HTSUS: 8541.21.0095
Mfr: Panasonic Electronic Components
Other Names: DRA2114Y0LTR,DRA2114Y0LDKR,DRA2114Y0LCT,DRA2114Y0L-ND
Base Product Number: DRA2114

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DRA2114Y0L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DRA2114Y0L
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DRA2114Y0L
TRANS PREBIAS PNP 50V 0.1A MINI3

TRANS PREBIAS PNP 50V 0.1A MINI3

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 292-DRA2114Y0L 1139815-DRA2114Y0L DRA2114Y0L
Product Name 0.1A 50V 59A Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
IC(max) 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
PD 200 milliwatts
Unlock Full Specs
to access all available technical data