Panasonic Bipolar Transistor Arrays, Pre-Biased DMG564010R

Description
TRANS PREBIAS NPN/PNP SMINI6
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Description
TRANS PREBIAS NPN/PNP SMINI6
Request a Quote Datasheet

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Description
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Bipolar Transistor Arrays, Pre-Biased - DMG564010R - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
DMG564010R
Bipolar Transistor Arrays, Pre-Biased DMG564010R
TRANS PREBIAS NPN/PNP SMINI6

TRANS PREBIAS NPN/PNP SMINI6

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DMG564010R - 1033681-DMG564010R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DMG564010R
1033681-DMG564010R
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DMG564010R 1033681-DMG564010R
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1033681-DMG564010R Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SMini6-F3-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 500μA, 10mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 35 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1033681-DMG564010R
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SMini6-F3-B
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 35 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DMG564010R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DMG564010R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DMG564010R
TRANS PREBIAS NPN/PNP SMINI6

TRANS PREBIAS NPN/PNP SMINI6

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number DMG564010R 1033681-DMG564010R DMG564010R
Product Name Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DMG564010R Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity 1 NPN, 1 PNP - Pre-Biased (Dual); NPN; PNP NPN; PNP; 1 NPN, 1 PNP - Pre-Biased (Dual)
Package Type 6-SMD, Flat Leads SOT3; SMini6-F3-B
IC(max) 100 milliamps 100 milliamps
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