Panasonic TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DMG563H50R DMG563H50R

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1033680-DMG563H50R
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 47k, 10k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SMini5-F3-B
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, SC-113CB, 5 PIN Product overview: DMG563H50R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DMG563H50R can be used for catalog matching and distributor lookup.