Panasonic 50V 12V 100mA Bipolar Transistor DME914C10R

Description
Trans Digital BJT NPN/PNP 50V/12V 100mA/500mA 6-Pin SSMini6-F3-B T/R Product overview: DME914C10R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 12V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 12V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DME914C10R can be used for catalog matching and distributor lookup.
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Description
Trans Digital BJT NPN/PNP 50V/12V 100mA/500mA 6-Pin SSMini6-F3-B T/R Product overview: DME914C10R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 12V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 12V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DME914C10R can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
50V 12V 100mA Bipolar Transistor
293-DME914C10R
50V 12V 100mA Bipolar Transistor 293-DME914C10R
Trans Digital BJT NPN/PNP 50V/12V 100mA/500mA 6-Pin SSMini6-F3-B T/R Product overview: DME914C10R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 12V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 12V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DME914C10R can be used for catalog matching and distributor lookup.

Trans Digital BJT NPN/PNP 50V/12V 100mA/500mA 6-Pin SSMini6-F3-B T/R Product overview: DME914C10R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 12V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 12V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DME914C10R can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DME914C10R - 1033661-DME914C10R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DME914C10R
1033661-DME914C10R
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DME914C10R 1033661-DME914C10R
Manufacturer: Panasonic Electronic Components Win Source Part Number: 1033661-DME914C10R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSMini6-F3-B Maximum Current Collector: 100mA, 500mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V Max Vce (sat): 250mV @ 500μA, 10mA / 250mV @ 10mA, 200mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 270 @ 10mA, 2V Maximum Power Dissipation: 125mW Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1033661-DME914C10R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SSMini6-F3-B
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V
Max Vce (sat): 250mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 270 @ 10mA, 2V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DME914C10R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DME914C10R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DME914C10R
TRANS NPN PREBIAS/PNP SSMINI6

TRANS NPN PREBIAS/PNP SSMINI6

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 293-DME914C10R 1033661-DME914C10R DME914C10R
Product Name 50V 12V 100mA Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DME914C10R Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PD 125 milliwatts
TJ -40 C (-40 F)
Polarity NPN; PNP; 1 NPN Pre-Biased, 1 PNP
Package Type SOT3; SSMini6-F3-B
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