Trans Digital BJT NPN/PNP 50V/12V 100mA/500mA 6-Pin SSMini6-F3-B T/R Product overview: DME914C10R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 12V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 12V, 100mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-DME914C10R can be used for catalog matching and distributor lookup.
Manufacturer: Panasonic Electronic Components
Win Source Part Number: 1033661-DME914C10R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SSMini6-F3-B
Maximum Current Collector: 100mA, 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 12V
Max Vce (sat): 250mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 5mA, 10V / 270 @ 10mA, 2V
Maximum Power Dissipation: 125mW
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
TRANS NPN PREBIAS/PNP SSMINI6
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 293-DME914C10R | 1033661-DME914C10R | DME914C10R |
| Product Name | 50V 12V 100mA Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - DME914C10R | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| PD | 125 milliwatts | ||
| TJ | -40 C (-40 F) | ||
| Polarity | NPN; PNP; 1 NPN Pre-Biased, 1 PNP | ||
| Package Type | SOT3; SSMini6-F3-B |