Panasonic TRANSISTORS - Transistors (BJT) - Arrays - DMA506010R DMA506010R

Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114696-DMA506010R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SMini6-F3-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 10mA, 100mA Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 300mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Arrays - DMA506010R - 114696-DMA506010R - Win Source Electronics
    Win Source Electronics
  • Bipolar Transistor Arrays - DMA506010R - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm - 590-DMA506010R - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DMA506010R - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114696-DMA506010R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SMini6-F3-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 10mA, 100mA Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 300mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - DMA506010R - 114696-DMA506010R - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - DMA506010R
114696-DMA506010R
TRANSISTORS - Transistors (BJT) - Arrays - DMA506010R 114696-DMA506010R
Manufacturer: Panasonic Electronic Components Win Source Part Number: 114696-DMA506010R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: SMini6-F3-B Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 10mA, 100mA Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 210 @ 2mA, 10V Maximum Power Dissipation: 300mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Panasonic Electronic Components
Win Source Part Number: 114696-DMA506010R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SMini6-F3-B
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 10mA, 100mA
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 210 @ 2mA, 10V
Maximum Power Dissipation: 300mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - DMA506010R - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays
DMA506010R
Bipolar Transistor Arrays DMA506010R
TRANS 2PNP 50V 0.1A SMINI6

TRANS 2PNP 50V 0.1A SMINI6

Supplier's Site
ERSAELECTRONICS PTE. LTD.
Singapore
0.1A 50V Bipolar Transistor
277-DMA506010R
0.1A 50V Bipolar Transistor 277-DMA506010R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 5 PIN Product overview: DMA506010R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-DMA506010R can be used for catalog matching and distributor lookup.

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI6-F3-B, SC-113DB, 5 PIN Product overview: DMA506010R from Panasonic is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1A, 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1A, 50V, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-DMA506010R can be used for catalog matching and distributor lookup.

Supplier's Site
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm - 590-DMA506010R - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm
590-DMA506010R
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm 590-DMA506010R
Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm

Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DMA506010R - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DMA506010R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DMA506010R
TRANS 2PNP 50V 0.1A SMINI6

TRANS 2PNP 50V 0.1A SMINI6

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 114696-DMA506010R DMA506010R 277-DMA506010R 590-DMA506010R DMA506010R
Product Name TRANSISTORS - Transistors (BJT) - Arrays - DMA506010R Bipolar Transistor Arrays 0.1A 50V Bipolar Transistor Bipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mm Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; 2 PNP (Dual) 2 PNP (Dual); PNP PNP PNP; PNP
Package Type SOT3; SMini6-F3-B 6-SMD, Flat Leads
IC(max) 100 milliamps 100 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts 50 volts
Operating Frequency 150 MHz
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